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10A single-configuration Insulated Gate Bipolar Transistor (IGBT) module engineered for demanding power switching applications
Designed for compatibility with Mitsubishi drive platforms
the 1DI150GE-100 is effectively unavailable through standard distribution channels on any timeline that supports production or repair schedules
with volume pricing offered for larger quantity requirements
servo drives and robotics
1MBI600NN-060-FUJI Palmetto Inventory 10A single-configuration Insulated Gate BipolarThe Fuji 1MBI600NN 060 is a single IGBT module rated for 600A continuous collector current and 600V collector emitter voltage. Engineered for demanding industrial power conversion environments, this NN series module integrates a high speed IGBT with a co packaged freewheeling diode, enabling efficient, thermally stable operation across high frequency switching cycles. Its robust construction and Fuji's proven chip technology make it a preferred choice
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