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41A average on-state current (IT(AV)) per thyristor with a low on-state voltage drop (VT) for reduced conduction losses
Low VCE(sat) characteristic reduces conduction losses and thermal stress at rated current
as Toshiba's legacy IGBT module lines are not guaranteed for indefinite production continuation
Integrated freewheeling diodes optimized for low recovery loss during high-frequency PWM switching cycles
Part Number FZ600R12KE3 Manufacturer Infineon Technologies Type IGBT Module Collector Current (IC) 600A Collector-Emitter Voltage (VCES) 1200V Availability In Stock Condition New
FF600R12KL4C-INFINEON Desc 41A average on-state current (IT(AV))The FF600R12KL4C is a premium Infineon IGBT module delivering exceptional performance at 600 amperes and 1200 volts. Built on Infineon's advanced IGBT4 chip technology, this module offers low conduction and switching losses, making it a preferred solution for high efficiency industrial power electronics. Its robust construction ensures reliable operation under demanding thermal and electrical conditions, meeting the needs of engineers designing high
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